Condensed Matter Physics Seminar
Angle-Resolved Photoemission of Gallium Nitride
University of Connecticut
New angle-resolved photoemission spectra of n-type GaN(000-1) N-side surface will be presented. The surface electronic structure agrees well with the theoretical predictions for Ga-adlayer GaN(000-1) 1x1 surface model. The results are similar to those obtained for p-type GaN . However, in case of p-type GaN the surface likely contained 30 degree rotated domains . We show that in the case of n-type GaN the surface is free of such domains, however, surface is likely Ga-rich and contains various reconstructions, besides the Ga-adlayer 1x1.
Thursday, September 29, 2005
Gant Science Complex
(The seminar is followed by coffee/tea, cookies, and an informal discussions.)